Laser induced photoconductivity in sol-gel derived Al doped ZnO thin films

被引：15

作者：

Eskandari, F. ^{[1
]}

Ranjbar, M. ^{[1
]}

Kameli, P. ^{[1
]}

Salamati, H. ^{[1
]}

机构：

[1] Isfahan Univ Technol, Dept Phys, Esfahan 8415683111, Iran

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 649卷

关键词：

Al doped ZnO; Sol-gel; Laser irradiation; Photocondoctivity; XRD; XPS; FE-SEM; OPTICAL-PROPERTIES; ANNEALING TEMPERATURE; ELECTRICAL CHARACTERIZATION; OXIDE FILMS; DEPOSITION; DEPENDENCE; GROWTH; CELLS;

D O I：

10.1016/j.jallcom.2015.07.093

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol-gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 degrees C for 1 h in air. X-ray diffraction (XRD) showed wurtzite crystalline structure for the films annealed above 400 degrees C. The films were subsequently irradiated by beams of excimer (KrF, lambda = 248 nm) laser. The evolution of crystal structure, surface morphology and optical properties were studied using XRD, filed emission scanning electron microscope (FE-SEM) and UV-Vis spectrophotometer, respectively. Real-time measurement of electrical conductivity during laser irradiation showed a transient or persistent photoconductivity effect. The effect of laser energy on this photoconductivity was also investigated. Based on the observed photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), the observed photoconductivity effect was described. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：35 / 45

页数：11

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