Gallium nitride heterostructures on 3D structured silicon

被引:12
作者
Fuendling, Soenke [1 ]
Soekmen, Uensal [1 ]
Peiner, Erwin [1 ]
Weimann, Thomas [2 ]
Hinze, Peter [2 ]
Jahn, Uwe [3 ]
Trampert, Achim [3 ]
Riechert, Henning [3 ]
Bakin, Andrey [1 ]
Wehmann, Hergo-Heinrich [1 ]
Waag, Andreas [1 ]
机构
[1] Inst Halbleitertech, D-38106 Braunschweig, Germany
[2] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
关键词
D O I
10.1088/0957-4484/19/40/405301
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigated GaN-based heterostructures grown on three-dimensionally patterned Si( 111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.
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页数:6
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