Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator

RF magnetron sputtered titanium oxide (TiO2-x) thin films were used as active channel layer to fabricate field-effect transistors (FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of similar to 500 and a high sub-threshold slope. It is attributed the existence of Si-O-Ti cross-linking bonding at TiO2-x/SiO2 interface, which was probed by X-ray Photoelectron Spectroscopy (XPS) measurement. A remark improvement of sub-threshold slope and on-to-off current ratio was observed due to post annealing in vacuum at 300 degrees C for 30min. By using the electron energy loss spectroscope (EELS) analysis, oxidization of TiO2-x layer closing to SiO2 layer region was found, suggesting that Si-O-Ti cross-linking bonding at TiO2-x/SiO2 interface breaks due to post annealing treatment. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi: 10.1063/1.3646525]