Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage

被引:3
作者
Choi, Woo Young [1 ]
机构
[1] Sogang Univ, Dept Elect Engn, Seoul 04107, South Korea
关键词
negative capacitance; ferroelectric capacitor; capacitance matching; NC vacuum channel transistor; vacuum channel transistor; steep switching; hysteresis effects; FIELD-EMISSION;
D O I
10.3390/mi11060543
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on-off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant.
引用
收藏
页数:11
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