The effect of biaxial strain on impurity diffusion in Si and SiGe

被引：13

作者：

Larsen, AN ^{[1
]}

Zangenberg, N ^{[1
]}

Fage-Pedersen, J ^{[1
]}

机构：

[1] Univ Aarhus, Inst Phys & Astron, DK-8000 Aarhus, Denmark

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 124卷

关键词：

diffusion studies; biaxial strain; molecular-beam epitaxy; RELAXED SI1-XGEX; ANTIMONY DIFFUSION; ARSENIC DIFFUSION; ACTIVATION VOLUME; BORON; GERMANIUM; SILICON; SB; HETEROSTRUCTURES; PHOSPHORUS;

D O I：

10.1016/j.mseb.2005.08.078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results from diffusion studies of different impurities in biaxially strained Si and Si1-xGex for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si1-xGex layers, and the impurity profiles are introduced during growth. We have in particular been concerned with the effect of biaxial strain (compressive and tensile) on the diffusion of pure vacancy-assisted diffusers (Sb and, partly, Ge) and pure interstitial-assisted diffusers (B and P). It is found that compressive biaxial strain retards the diffusion of the interstitial-assisted diffusers, whereas tensile biaxial strain enhances the diffusion of these impurities. The opposite is the case for the vacancy-assisted diffusers. (c) 2005 Published by Elsevier B.V.

引用

页码：241 / 244

页数：4

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