Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

被引：25

作者：

Aruev, P. N. ^{[1
]}

Barysheva, M. M. ^{[2
]}

Ber, B. Ya ^{[1
]}

Zabrodskaya, N. V. ^{[1
]}

Zabrodskii, V. V. ^{[1
]}

Lopatin, A. Ya ^{[2
]}

Pestov, A. E. ^{[2
]}

Petrenko, M. V. ^{[1
]}

Polkovnikov, V. N. ^{[2
]}

Salashchenko, N. N. ^{[2
]}

Sukhanov, V. L. ^{[1
]}

Chkhalo, N. I. ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

QUANTUM ELECTRONICS | 2012年 / 42卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

EUV radiation; silicon photodiode; detector; EUV filter; X-RAY RANGE; DETECTORS; RADIATION;

D O I：

10.1070/QE2012v042n10ABEH014901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 mm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light.

引用

页码：943 / 948

页数：6

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