The impact of heterojunction formation temperature on obtainable conversion efficiency in n-ZnO/p-Cu2O solar cells

被引：71

作者：

Nishi, Yuki ^{[1
]}

Miyata, Toshihiro ^{[1
]}

Minami, Tadatsugu ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Optoelect Device Syst R&D Ctr, Nonoichi, Ishikawa 9218501, Japan

来源：

THIN SOLID FILMS | 2013年 / 528卷

关键词：

Cu2O; ZnO; Solar sells; Thin film; Heterojunction; CUPROUS-OXIDE; PHOTOVOLTAIC PROPERTIES;

D O I：

10.1016/j.tsf.2012.09.090

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To achieve efficiency improvement of n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using Cu2O sheets prepared by oxidizing thermally Cu sheets, the influence of heterojunction formation temperature on the obtainable conversion efficiency was investigated in different types of solar cells with Al-doped ZnO (AZO)/Cu2O and AZO/non-doped ZnO (ZO)/Cu2O structures. AZO/ZO/Cu2O p-n heterojunction and AZO/Cu2O Schottky barrier solar cells fabricated by forming AZO and ZO thin films at room temperature exhibited high efficiencies of 4.12 and 2.19%, respectively. Achieving higher efficiency solar cells requires that the surface of Cu2O sheets always be stabilized or treated using a low-damage deposition technique at a low deposition temperature. In addition to a surface condition improvement of Cu2O sheets, a significant improvement of obtained photovoltaic property in AZO/ZO/Cu2O heterojunction solar cells is attributable to enhanced potential barrier height and depletion layer width, resulting from the inserted buffer layer functioning as an n-type ZO layer as well as an active layer in the p-n heterojunction. (c) 2012 Published by Elsevier B.V.

引用

页码：72 / 76

页数：5

共 28 条

[1] Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition [J].

Agura, H ;

Suzuki, A ;

Matsushita, T ;

Aoki, T ;

Okuda, M .

THIN SOLID FILMS, 2003, 445 (02) :263-267

[2]

[Anonymous], 2011, 37 IEEE PHOT C HIGH

[3] A STUDY OF ELECTRODEPOSITED CUPROUS-OXIDE PHOTOVOLTAIC CELLS [J].

BRISKMAN, RN .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1992, 27 (04) :361-368

[4] CUPROUS-OXIDE INDIUM TIN OXIDE THIN-FILM PHOTO-VOLTAIC CELLS [J].

FUJINAKA, M ;

BEREZIN, AA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3582-3588

[5] INVESTIGATION OF METAL-OXIDE CUPROUS-OXIDE HETEROJUNCTION SOLAR-CELLS [J].

HERION, J ;

NIEKISCH, EA ;

SCHARL, G .

SOLAR ENERGY MATERIALS, 1980, 4 (01) :101-112

[6] ENHANCEMENT OF THE PHOTOVOLTAIC CONVERSION EFFICIENCY IN CU/CU2O SCHOTTKY-BARRIER SOLAR-CELLS BY H+ ION IRRADIATION [J].

IWANOWSKI, RJ ;

TRIVICH, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (02) :735-741

[7] An analysis of temperature dependent current-voltage characteristics of Cu2O-ZnO heterojunction solar cells [J].

Jeong, SeongHo ;

Song, Sang Ho ;

Nagaich, Kushagra ;

Campbell, Stephen A. ;

Aydil, Eray S. .

THIN SOLID FILMS, 2011, 519 (19) :6613-6619

[8] The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures [J].

Kramm, B. ;

Laufer, A. ;

Reppin, D. ;

Kronenberger, A. ;

Hering, P. ;

Polity, A. ;

Meyer, B. K. .

APPLIED PHYSICS LETTERS, 2012, 100 (09)

[9] Effect of Junction Morphology on the Performance of Polycrystalline Cu2O Homojunction Solar Cells [J].

McShane, Colleen M. ;

Siripala, Withana P. ;

Choi, Kyoung-Shin .

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2010, 1 (18) :2666-2670

[10] Effect of ZnO film deposition methods on the photovoltaic properties of ZnO-Cu2O heterojunction devices [J].

Minami, T ;

Miyata, T ;

Ihara, K ;

Minamino, Y ;

Tsukada, S .

THIN SOLID FILMS, 2006, 494 (1-2) :47-52

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