A 90 to 170V scalable P-LDMOS with accompanied high voltage PJFET

被引：0

作者：

Ellis-Monaghan, John ^{[1
]}

Shi, Yun ^{[1
]}

Sharma, Santosh ^{[1
]}

Feilchenfeld, Natalie ^{[1
]}

Letavic, Ted ^{[1
]}

Phelps, Rick ^{[1
]}

Hedges, Crystal ^{[1
]}

Cook, Don ^{[1
]}

Dunn, Jim ^{[1
]}

机构：

[1] IBM Microelect Div, Essex Jct, VT USA

来源：

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年

关键词：

Power MOSFET; LDMOS; RESURF; PJFET; PLDMOS;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel JFET redesign of a laterally scaled P-LDMOS device is presented. The P-LDMOS device has excellent Rsp as it is scaled from 90V to 170V operation. This P-LDMOS design is modified to produce a 100V PJFET with good turn-off characteristics and a relatively low Vpinch of 3-7V.

引用

页码：129 / 132

页数：4

共 11 条

[1] The Foundry Perspective on Integrated Power Technologies [J].

Chen, Ken ;

Chen, Claire .

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, :6-+

[2]

Choi Yong-Keon, 2011, ISPSD 2011, P219

[3]

Kong ST, 2011, PROC INT SYMP POWER, P176, DOI 10.1109/ISPSD.2011.5890819

[4]

Minixhofer R, 2010, PROC INT SYMP POWER, P75

[5]

Mitova R, 2004, IEEE POWER ELECTRON, P4163

[6]

Park IY, 2008, INT SYM POW SEMICOND, P64

[7]

Pendharkar S, 2004, ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P419

[8] BCD8 from 7V to 70V:: a new 0.18μm technology platform to address the evolution of applications towards smart power ICs with high logic contents [J].

Riccardi, Darniano ;

Causio, Alessandro ;

Filippi, Ilenia ;

Paleari, Andrea ;

Pregnolato, Lodovica Vecchi Alberto ;

Galbiati, Paola ;

Contiero, Claudio .

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 2007, :73-+

[9] Design and Optimization of Silicon JFET in 180nm RF/BiCMOS Technology [J].

Shi, Yun ;

Rassel, Robert M. ;

Phelps, Richard A. ;

Rainey, BethAnn ;

Dunn, Jim ;

Harame, David .

2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, :86-89

[10]

Vincent L, 2006, INT SYM POW SEMICOND, P253

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