Characterization of InGaP Heterojunction Emitter Quantum Dot Solar Cells

被引：0

作者：

Bittner, Zachary S. ^{[1
]}

Forbes, David V. ^{[1
]}

Bailey, Christopher G. ^{[2
]}

Polly, Stephen J. ^{[1
]}

Slocum, Michael A. ^{[1
]}

Kerestes, Christopher ^{[1
]}

Hubbard, Seth M. ^{[1
]}

机构：

[1] Rochester Inst Technol, NanoPower Res Lab, Rochester, NY 14623 USA

[2] US Naval Res Lab, Washington, DC USA

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

基金：

美国国家科学基金会;

关键词：

GaAs; InAs Quantum Dot; Heterojunction; InGaP; Photovoltaics; EFFICIENCY;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Heterojunction emitter InAs/GaAs quantum dot solar cells (QDSC) with an In0.48Ga0.52P (InGaP) n-type emitter and p-type GaAs base were fabricated along with homojunction nip solar cells in order to enable sub-cell polarity compatibility of InAs/GaAs QDSCs with current state-of-the-art monolithic InGaP/GaAs/Ge triple junction solar cells for space applications and to investigate potential dark current suppression effects and electronic field enhancement effects on carrier collection in InAs/GaAs QDSC. Quantum dot solar cells with one-Sun AM0 open circuit voltages greater than 970 mV were fabricated as compared to a 1.020 V heterojunction emitter 'control' sample. Preliminary testing showed a reduction in short circuit current density from homojunction to heterojunction GaAs solar cells, primarily from changes in reflection and uncollected absorption in the InGaP emitter.

引用

页码：3158 / 3161

页数：4

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