Type Inversion and Certain Physical Properties of Spray Pyrolysed SnO2: Al Films for Novel Transparent Electronics Applications

被引：68
作者：
Ravichandran, K. [1 ]
Thirumurugan, K. [1 ]
机构：
[1] AVVM Sri Pushpam Coll Autonomous, Post Grad & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2014年 / 30卷 / 02期
关键词：
Tin oxide films; P-type transparent conducting oxide (TCO); Spray pyrolysis; Transparent electronics; Electrical properties; Optical properties; TIN OXIDE-FILMS; THIN-FILMS; SOLVENT VOLUME; SUBSTRATE-TEMPERATURE; DEPOSITED FLUORINE; OPTICAL-PROPERTIES; GROWTH; THICKNESS; PHOTOLUMINESCENCE; MORPHOLOGY;
D O I：
10.1016/j.jmst.2013.09.019
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The Al doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity (p) is the minimum (0.38 Omega cm) for 20 at.% of Al doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to Al doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the Al doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2: Al films suitable for transparent electronic devices.
引用
收藏
页码：97 / 102
页数：6
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