Logic Computation in Phase Change Materials by Threshold and Memory Switching

被引：144
作者：
Cassinerio, M. [1 ,2 ]
Ciocchini, N. [1 ,2 ]
Ielmini, D. [1 ,2 ]
机构：
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, MI, Italy
[2] IU NET, I-20133 Milan, MI, Italy
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 41期
关键词：
phase change materials; non-volatile storage; boolean logic; non-volatile logic; memristors; THIN-FILMS; CIRCUITS; CRYSTALLIZATION; OPERATIONS; STORAGE;
D O I：
10.1002/adma.201301940
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Memristors, namely hysteretic devices capable of changing their resistance in response to applied electrical stimuli, may provide new opportunities for future memory and computation, thanks to their scalable size, low switching energy and nonvolatile nature. We have developed a functionally complete set of logic functions including NOR, NAND and NOT gates, each utilizing a single phase-change memristor (PCM) where resistance switching is due to the phase transformation of an active chalcogenide material. The logic operations are enabled by the high functionality of nanoscale phase change, featuring voltage comparison, additive crystallization and pulse-induced amorphization. The nonvolatile nature of memristive states provides the basis for developing reconfigurable hybrid logic/memory circuits featuring low-power and high-speed switching. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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收藏
页码：5975 / 5980
页数：6
相关论文
共 31 条
[1]   Magnetic domain-wall logic [J].
Allwood, DA ;
Xiong, G ;
Faulkner, CC ;
Atkinson, D ;
Petit, D ;
Cowburn, RP .
SCIENCE, 2005, 309 (5741) :1688-1692
[2]   'Memristive' switches enable 'stateful' logic operations via material implication [J].
Borghetti, Julien ;
Snider, Gregory S. ;
Kuekes, Philip J. ;
Yang, J. Joshua ;
Stewart, Duncan R. ;
Williams, R. Stanley .
NATURE, 2010, 464 (7290) :873-876
[3]   Nanosecond switching in GeTe phase change memory cells [J].
Bruns, G. ;
Merkelbach, P. ;
Schlockermann, C. ;
Salinga, M. ;
Wuttig, M. ;
Happ, T. D. ;
Philipp, J. B. ;
Kund, M. .
APPLIED PHYSICS LETTERS, 2009, 95 (04)
[4]   Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses [J].
Ielmini, Daniele .
PHYSICAL REVIEW B, 2008, 78 (03)
[5]   Tunnel field-effect transistors as energy-efficient electronic switches [J].
Ionescu, Adrian M. ;
Riel, Heike .
NATURE, 2011, 479 (7373) :329-337
[6]  
Jo S. H., 2008, NANO LETT, V10, P1297
[7]   Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys [J].
Kalb, J ;
Spaepen, F ;
Wuttig, M .
APPLIED PHYSICS LETTERS, 2004, 84 (25) :5240-5242
[8]   Realizing All-Spin-Based Logic Operations Atom by Atom [J].
Khajetoorians, Alexander Ako ;
Wiebe, Jens ;
Chilian, Bruno ;
Wiesendanger, Roland .
SCIENCE, 2011, 332 (6033) :1062-1064
[9]   Threshold field of phase change memory materials measured using phase change bridge devices [J].
Krebs, Daniel ;
Raoux, Simone ;
Rettner, Charles T. ;
Burr, Geoffrey W. ;
Salinga, Martin ;
Wuttig, Matthias .
APPLIED PHYSICS LETTERS, 2009, 95 (08)
[10]   The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits [J].
Kuekes, PJ ;
Stewart, DR ;
Williams, RS .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
1234