A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

被引：165

作者：

Huang, Peng ^{[1
]}

Liu, Xiao Yan ^{[1
]}

Chen, Bing ^{[1
]}

Li, Hai Tong ^{[1
]}

Wang, Yi Jiao ^{[1
]}

Deng, Ye Xin ^{[1
]}

Wei, Kang Liang ^{[1
]}

Zeng, Lang ^{[1
]}

Gao, Bin ^{[1
]}

Du, Gang ^{[1
]}

Zhang, Xing ^{[1
]}

Kang, Jin Feng ^{[1
]}

机构：

[1] Peking Univ, Key Lab Microelect Devices & Circuits, Inst Microelect, Beijing 100871, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 12期

关键词：

Circuit simulation; compact model; conduction of resistive-switching random access memory (RRAM); conductive filament's evolution; parasitic effect; pulse mode; resistive switching; RESISTIVE-SWITCHING MEMORY; DEVICE;

D O I：

10.1109/TED.2013.2287755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics-based compact model of metal-oxide-based resistive-switching random access memory (RRAM) cell under dc and ac operation modes is presented. In this model, the conductive filament evolution corresponding to the resistive switching process is modeled by considering the transport behaviors of oxygen vacancies and oxygen ions together with the temperature effect. Both the metallic-like and electron hopping conduction transports are considered to model the conduction of RRAM. The model can reproduce both the typical $I{-}V$ characteristics of RRAM in high-/low-resistance state (LRS) and the nonlinear characteristics in LRS. Moreover, to accurately model ac operation mode, the effects of parasitic capacitance and resistance are included in our model. The developed compact model is verified and calibrated by measured data in different ${rm HfO}x-based RRAM devices under dc and ac operation modes. The excellent agreement between the model predictions and experimental results shows a promising prospect of the future implementation of this compact model in large-scale circuit simulation to optimize the design of RRAM. © 2013 IEEE.

引用

页码：4090 / 4097

页数：8

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