Performance and Stability of Aerosol-Jet-Printed Electrolyte-Gated Transistors Based on Poly(3-hexylthiophene)

被引：115
作者：
Kim, Se Hyun [1 ,2 ]
Hong, Kihyon [1 ]
Lee, Keun Hyung [1 ]
Frisbie, C. Daniel [1 ]
机构：
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[2] Yeungnam Univ, Dept Adv Organ Mat Engn, Gyongsan 712749, South Korea
来源：
ACS APPLIED MATERIALS & INTERFACES | 2013年 / 5卷 / 14期
关键词：
electrolyte gating; electrochemical transistor; aerosol jet printing; poly(3-hexylthiophene); ion gel; device stability; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; DIELECTRICS;
D O I：
10.1021/am401200y
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report performance optimization and stability analysis of aerosol-jet-printed electrolyte-gated transistors (EGTs) based on the polymer semiconductor poly(3-hexylthiophene) (P3HT). EGTs were optimized with respect to printed P3HT thickness and the completed device annealing temperature. EGTs with relatively thin P3HT films (similar to 50 nm) annealed at 120 degrees C have the best performance and display an unusual combination of metrics including sub-1-V operation, ON/OFF current ratios of 106, OFF currents of <10(-10) A (<10(-6) A cm(-2)), saturation hole mobilities of 1.3 cm(2) V-1 s(-1), threshold voltages of -0.3 V, and subthreshold swings of 70 mV decade(-1). Furthermore, optimized EGTs printed on polyester substrates are extremely robust to bias stress and repeated mechanical bending strain. Collectively, the results suggest that optimized P3HT-based EGTs are promising devices for printed, flexible electronics.
引用
收藏
页码：6580 / 6585
页数：6
相关论文
共 27 条
[1]   Interaction of oxygen with conjugated polymers: Charge transfer complex formation with poly(3-alkylthiophenes) [J].
Abdou, MSA ;
Orfino, FP ;
Son, Y ;
Holdcroft, S .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1997, 119 (19) :4518-4524
[2]   Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic [J].
Cho, Jeong Ho ;
Lee, Jiyoul ;
Xia, Yu ;
Kim, Bongsoo ;
He, Yiyong ;
Renn, Michael J. ;
Lodge, Timothy P. ;
Frisbie, C. Daniel .
NATURE MATERIALS, 2008, 7 (11) :900-906
[3]   Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula [J].
Choi, Hyun Ho ;
Kang, Moon Sung ;
Kim, Min ;
Kim, Haena ;
Cho, Jeong Ho ;
Cho, Kilwon .
ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (06) :690-696
[4]   Bias-Stress-Induced Charge Trapping at Polymer Chain Ends of Polymer Gate-Dielectrics in Organic Transistors [J].
Choi, Hyun Ho ;
Lee, Wi Hyoung ;
Cho, Kilwon .
ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (22) :4833-4839
[5]   Inkjet Printed, High Mobility Inorganic-Oxide Field Effect Transistors Processed at Room Temperature [J].
Dasgupta, Subho ;
Kruk, Robert ;
Mechau, Norman ;
Hahn, Horst .
ACS NANO, 2011, 5 (12) :9628-9638
[6]   DIELECTRIC MATERIALS Gels excel [J].
Facchetti, Antonio .
NATURE MATERIALS, 2008, 7 (11) :839-840
[7]   Thermal stability of organic thin-film transistors with self-assembled monolayer dielectrics [J].
Fukuda, Kenjiro ;
Yokota, Tomoyuki ;
Kuribara, Kazunori ;
Sekitani, Tsuyoshi ;
Zschieschang, Ute ;
Klauk, Hagen ;
Someya, Takao .
APPLIED PHYSICS LETTERS, 2010, 96 (05)
[8]   Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles [J].
Hamedi, Mahiar ;
Herlogsson, Lars ;
Crispin, Xavier ;
Marcilla, Rebeca ;
Berggren, Magnus ;
Inganas, Olle .
ADVANCED MATERIALS, 2009, 21 (05) :573-+
[9]   Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator [J].
Herlogsson, Lars ;
Noh, Yong-Young ;
Zhao, Ni ;
Crispin, Xavier ;
Sirringhaus, Henning ;
Berggren, Magnus .
ADVANCED MATERIALS, 2008, 20 (24) :4708-+
[10]   Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic [J].
Hong, Kihyon ;
Kim, Se Hyun ;
Lee, Keun Hyung ;
Frisbie, C. Daniel .
ADVANCED MATERIALS, 2013, 25 (25) :3413-3418
123