Carrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 μm

被引：23
|
作者：
Syperek, M. [1 ]
Dusanowski, L. [1 ]
Andrzejewski, J. [1 ]
Rudno-Rudzinski, W. [1 ]
Sek, G. [1 ]
Misiewicz, J. [1 ]
Lelarge, F. [2 ,3 ]
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] III V Lab, F-91460 Marcoussis, France
[3] CEA LETI, F-91460 Marcoussis, France
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期
关键词：
ELECTRON RELAXATION; BAND PARAMETERS; DOTS; CAPTURE; INP; TEMPERATURE; LASERS; INAS; GAAS;
D O I：
10.1063/1.4818759
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carrier relaxation dynamics in self-assembled InAs/Ga0.2In0.8As0.4P0.6/InP(001) quantum dashes (QDashes) has been studied by degenerated time-resolved pump-probe and non-resonant photoluminescence spectroscopy at low temperature. These experiments yielded information about the exciton ground-state recombination lifetime reaching similar to 1.75 ns. Additionally, the excited-to-ground state relaxation time has been measured to increase significantly from similar to 40 ps up to similar to 250 ps with the QDash size. Slow down of the intra-band relaxation time is interpreted in terms of the internal dash-to-dash energy-band-structure variation. The carrier dynamics in this case is most likely governed by the acoustic-phonon-mediated scattering processes. (C) 2013 AIP Publishing LLC.
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页数：5
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