Carrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 μm

被引：23

作者：

Syperek, M. ^{[1
]}

Dusanowski, L. ^{[1
]}

Andrzejewski, J. ^{[1
]}

Rudno-Rudzinski, W. ^{[1
]}

Sek, G. ^{[1
]}

Misiewicz, J. ^{[1
]}

Lelarge, F. ^{[2
,3
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] III V Lab, F-91460 Marcoussis, France

[3] CEA LETI, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期

关键词：

ELECTRON RELAXATION; BAND PARAMETERS; DOTS; CAPTURE; INP; TEMPERATURE; LASERS; INAS; GAAS;

D O I：

10.1063/1.4818759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier relaxation dynamics in self-assembled InAs/Ga0.2In0.8As0.4P0.6/InP(001) quantum dashes (QDashes) has been studied by degenerated time-resolved pump-probe and non-resonant photoluminescence spectroscopy at low temperature. These experiments yielded information about the exciton ground-state recombination lifetime reaching similar to 1.75 ns. Additionally, the excited-to-ground state relaxation time has been measured to increase significantly from similar to 40 ps up to similar to 250 ps with the QDash size. Slow down of the intra-band relaxation time is interpreted in terms of the internal dash-to-dash energy-band-structure variation. The carrier dynamics in this case is most likely governed by the acoustic-phonon-mediated scattering processes. (C) 2013 AIP Publishing LLC.

引用

页数：5

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