Time Dependence of Photocurrent in Chemical Vapor Deposition MoS2 Monolayer-Intrinsic Properties and Environmental Effects

被引:20
作者
Czerniak-Losiewicz, Karolina [1 ]
Gertych, Arkadiusz P. [1 ]
Swiniarski, Michal [1 ]
Judek, Jaroslaw [1 ]
Zdrojek, Mariusz [1 ]
机构
[1] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland
关键词
LAYER MOS2; PHOTOLUMINESCENCE; PHOTOTRANSISTORS; PHOTODETECTOR; GAIN;
D O I
10.1021/acs.jpcc.0c04452
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a model for the description of a room temperature photocurrent temporal response in devices made of a chemical vapor deposition grown molybdenum disulfide monolayer. The proposed model distinguishes three components of a photoresponse that may be attributed to photoconductance and a photogating effect, where photogating involves environmental and intrinsic material contribution. We showed that each time constant obtained from the model differed by an order of magnitude and remained unaffected by changes of the environment, whereas the amplitudes behaved according to the attributed effects. Notably, the rising photocurrent signal was a useful source of information regarding the persistent photoconductivity effect. Finally, we demonstrated the versatility of our model by applying it to some previous reports on time-resolved photocurrent. Our results help to determine the optoelectronic properties of MoS2 monolayers and future photosensitive devices operating at ambient room temperature.
引用
收藏
页码:18741 / 18746
页数:6
相关论文
共 36 条
  • [1] Ahn J.-H., 2017, SCI REP, V7, P1, DOI DOI 10.1038/s41598-016-0028-x
  • [2] Photocurrent generation with two-dimensional van der Waals semiconductors
    Buscema, Michele
    Island, Joshua O.
    Groenendijk, Dirk J.
    Blanter, Sofya I.
    Steele, Gary A.
    van der Zant, Herre S. J.
    Castellanos-Gomez, Andres
    [J]. CHEMICAL SOCIETY REVIEWS, 2015, 44 (11) : 3691 - 3718
  • [3] Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
    Di Bartolomeo, Antonio
    Grillo, Alessandro
    Urban, Francesca
    Iemmo, Laura
    Giubileo, Filippo
    Luongo, Giuseppe
    Amato, Giampiero
    Croin, Luca
    Sun, Linfeng
    Liang, Shi-Jun
    Ang, Lay Kee
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2018, 28 (28)
  • [4] Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors
    Di Bartolomeo, Antonio
    Genovese, Luca
    Foller, Tobias
    Giubileo, Filippo
    Luongo, Giuseppe
    Croin, Luca
    Liang, Shi-Jun
    Ang, L. K.
    Schleberger, Marika
    [J]. NANOTECHNOLOGY, 2017, 28 (21)
  • [5] Furchi MM, 2014, NANO LETT, V14, P6165, DOI [10.1021/nl502339q, 10.1021/n1502339q]
  • [6] A strain tunable single-layer MoS2 photodetector
    Gant, Patricia
    Huang, Peng
    de Lara, David Perez
    Guo, Dan
    Frisenda, Riccardo
    Castellanos-Gomez, Andres
    [J]. MATERIALS TODAY, 2019, 27 : 8 - 13
  • [7] Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor
    Ghatak, Subhamoy
    Ghosh, Arindam
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (12)
  • [8] Ambient effects on photogating in MoS2 photodetectors
    Han, Peize
    Adler, Eli R.
    Liu, Yijing
    St Marie, Luke
    El Fatimy, Abdel
    Melis, Scott
    Van Keuren, Edward
    Barbara, Paola
    [J]. NANOTECHNOLOGY, 2019, 30 (28)
  • [9] Highly sensitive MoS2 photodetectors with graphene contacts
    Han, Peize
    St Marie, Luke
    Wang, Qing X.
    Quirk, Nicholas
    El Fatimy, Abdel
    Ishigami, Masahiro
    Barbara, Paola
    [J]. NANOTECHNOLOGY, 2018, 29 (20)
  • [10] Layer dependent photoresponse behavior of chemical vapor deposition synthesized MoS2 films for broadband optical sensing
    Kaushik, Vishakha
    Varandani, Deepak
    Das, Pintu
    Mehta, B. R.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (47)