Fabrication of ZnO nanorods on O-polar ZnO layers grown by molecular beam epitaxy and electrical characterization using conductive atomic force microscopy

被引:11
|
作者
Ogata, K. [1 ]
Koike, K. [1 ]
Sasa, S. [1 ]
Inoue, M. [1 ]
Yano, M. [1 ]
机构
[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan
关键词
SCHOTTKY NANOCONTACTS; SURFACE; ARRAYS;
D O I
10.1088/0268-1242/24/1/015006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using the aqueous solution with microwave-assisted heating, ZnO nanorods were fabricated on an O-polar single crystal molecular beam epitaxial grown ZnO layer. Film-like ZnO due to aggregation of nanorods was observed when heated at 95 degrees C with a precursor concentration of 100 mM. On the other hand, hexagonal ZnO nanorods with well-defined orientation were achieved by lowering the reaction temperature down to 60 degrees C with a precursor concentration of 10 mM. The top surface of the hexagonal ZnO nanorods has a roughness of a few nm, revealed by means of atomic force microscopy (AFM). Conductive-AFM measurement indicates Schottky rectifying behavior in Au-coated cantilever/ZnO nanorods. The current-voltage characteristics are discussed in connection with the loading force of AFM measurements.
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页数:4
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