Modeling of the X-irradiation Response of the Carrier Relaxation Time in P3HT:PCBM Organic-Based Photocells

被引:6
作者
Kambour, Kenneth [1 ]
Rosen, Nadav [2 ]
Kouhestani, Camron [3 ]
Duc Nguyen [3 ]
Mayberry, Clay [2 ]
Devine, Roderick A. B. [4 ]
Kumar, A. [5 ]
Chen, C-C. [5 ]
Li, Gang [5 ]
Yang, Yang [5 ]
机构
[1] SAIC Kirtland AFB, Kirtland AFB, NM 87117 USA
[2] USAF, Res Lab, Space Vehicles Directorate Kirtland AFB, Kirtland AFB, NM 87117 USA
[3] COSMIAC Kirtland AFB, Kirtland AFB, NM 87117 USA
[4] Think Strategically, Kirtland AFB, NM 87117 USA
[5] Univ Calif Los Angeles, Los Angeles, CA 90024 USA
关键词
Simulation; Photovoltaic cells; X-rays; x-rays; solar cells; SOLAR-CELLS;
D O I
10.1109/TNS.2012.2222666
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Initial experimental work has demonstrated that x-ray bombardment of organic-based photocells (specifically P3HT:PCBM-based) leads to a reduction in the open-circuit voltage (V-oc) without apparent change in the carrier relaxation time. The variation of V-oc was suggested to be due to the injection and trapping of holes near the anode, which resulted in a decrease in the built-in potential. We have extended the experimental measurements to higher total dose (similar to 1300 krad SiO2)). Using standard inorganic modeling tools, a device model of the organic cell has been developed and predictions made. These predictions have been compared to the results of the previous and new experimental measurements and they demonstrate reasonable agreement between the two, thereby supporting the initial charge buildup hypothesis. Questions about the origin and behavior of the photo-carrier relaxation arise.
引用
收藏
页码:2902 / 2908
页数:7
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