Film Thickness Dependence of Crystal Structure in {100}-Oriented Epitaxial Pb(Zr0.65Ti0.35)O3 Films Grown on Single-Crystal Substrates with Different Thermal Expansion Coefficients

被引:0
作者
Ehara, Yoshitaka [1 ]
Yasui, Shintaro [1 ]
Ishii, Koji [2 ]
Funakubo, Hiroshi [1 ]
机构
[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan
[2] Asylum Technol Co Ltd, Bunkyo Ku, Tokyo 1130034, Japan
关键词
THIN-FILMS; DOMAIN;
D O I
10.1143/JJAP.51.09LA14
中图分类号
O59 [应用物理学];
学科分类号
摘要
{100}-oriented epitaxial Pb(Zr0.65Ti0.35)O-3 films with various film thicknesses from 0.1 to 3 mu m were grown on (100)(c)SrRuO3 // (100)SrTiO3 and (100)(c)SrRuO3 // (100)LaNiO3 // (001)CaF2 substrates. The out-of-plane/in-plane lattice parameter ratio of the films on the CaF2 substrates was larger than that on the SrTiO3 substrates up to 1.1 mu m film thickness, while (90 degrees - alpha) (alpha was defined as the internal tilt angle) was almost 0 degrees. Results of analysis of Raman spectra and piezoresponse images suggest that the 1.1-mu m-thick film grown on the (100)(c)SrRuO3 // (100)LaNiO3 // (001)CaF2 substrate had tetragonal symmetry with a polar-axis orientation. Moreover, the saturation polarization values of the films measured from P-E hysteresis loops correspond to the two P-s values estimated from the thermodynamic theory, assuming the change in the polar direction due to the symmetry change to tetragonal, and from the crystal distortion in tetragonal symmetry. This can be explained by the large compressive stress from the CaF2 substrate having a large thermal expansion coefficient. (c) 2012 The Japan Society of Applied Physics
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页数:5
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共 19 条
[11]  
Muralt P., 1999, Ferroelectrics, V224, P235, DOI 10.1080/00150199908210572
[12]   Improvement of property of Pb(ZrxTi1-x)O3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition [J].
Nagashima, K ;
Aratani, M ;
Funakubo, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (10A) :L996-L998
[13]   Polarized Raman study for epitaxial PZT thick film with the mixture orientation of (100)/(001) [J].
Nakajima, Mitsumasa ;
Fujisawa, Takashi ;
Nishida, Ken ;
Yamamoto, Takashi ;
Osada, Minoru ;
Naganuma, Hiroshi ;
Okamura, Soichiro ;
Funakubo, Hiroshi .
ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII, 2010, 421-422 :99-+
[14]   Electrical properties of highly strained epitaxial Pb(Zr,Ti)O3 thin films on MgO(100) [J].
Okino, H ;
Nishikawa, T ;
Shimizu, M ;
Horiuchi, T ;
Matsushige, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B) :5388-5391
[15]   Domain structures in epitaxial Pb(Zr0.68,Ti0.32)O3 thin films [J].
Saito, K ;
Oikawa, T ;
Yamaji, I ;
Akai, T ;
Funakubo, H .
JOURNAL OF CRYSTAL GROWTH, 2002, 237 :464-467
[17]   FERROELECTRIC MEMORIES [J].
SCOTT, JF ;
DEARAUJO, CAP .
SCIENCE, 1989, 246 (4936) :1400-1405
[18]   CRYSTAL STRUCTURE OF PB(ZR-TI)O3 [J].
SHIRANE, G ;
SUZUKI, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1952, 7 (03) :333-333
[19]   Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown, defect-free single-crystalline films [J].
Vrejoiu, Ionela ;
Le Rhun, Gwenael ;
Pintilie, Lucian ;
Hesse, Dietrich ;
Alexe, Marin ;
Goesele, Ulrich .
ADVANCED MATERIALS, 2006, 18 (13) :1657-+