Simulating Charge Injection and Dynamics in Microscale Organic Field-Effect Transistors

被引:6
作者
Gagorik, Adam G. [1 ]
Hutchison, Geoffrey R. [1 ]
机构
[1] Univ Pittsburgh, Dept Chem, Pittsburgh, PA 15260 USA
关键词
N-CHANNEL; TRANSPORT; AMBIPOLAR; ENERGETICS; INTERFACE; DISORDER; PROGRESS; ENERGY;
D O I
10.1021/jp306597n
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Monte Carlo simulations were used to investigate the carrier dynamics in realistic, finite-sized, small-molecule, organic field-effect transistors (OFETs) within the first few nanoseconds of device turn-on as well as when the system equilibrates. The results show that the device current exhibits large magnitude oscillations (64 +/- 27 nA) during device turn-on if the initial configuration assumed no carriers in the device (i.e., carriers only arrive through injection from the source electrode). After equilibration (125 ns), the current continues to oscillate, however, at lower magnitude (64 +/- 2 nA), even if the initial configuration assumed randomly placed charges. Fourier transforms of device current as a function of simulation time show that these oscillations occur at well-defined device geometry-dependent frequencies, independent of initial configuration of the system. Examination of the carrier lifetimes and path lengths, which were found to vary nonlinearly with device length, are used to argue that the oscillations are the result of the charge injection procedure, which assumed a constant probability event. The results suggest that carriers travel in waves in realistically finite-sized devices and that carrier lifetime and path length vary nonlinearly by device geometry. Alternating current studies of OFETs may be useful in confirming these findings.
引用
收藏
页码:21232 / 21239
页数:8
相关论文
共 43 条
[1]   CHARGE TRANSPORT IN DISORDERED ORGANIC PHOTOCONDUCTORS - A MONTE-CARLO SIMULATION STUDY [J].
BASSLER, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 175 (01) :15-56
[2]   Electronic injection and conduction processes for polymer devices [J].
Braun, D .
JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2003, 41 (21) :2622-2629
[3]   Energetics of molecular interfaces [J].
Cahen, David ;
Kahn, Antoine ;
Umbach, Eberhard .
MATERIALS TODAY, 2005, 8 (07) :32-41
[4]   Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors [J].
Caironi, M. ;
Newman, C. ;
Moore, J. R. ;
Natali, D. ;
Yan, H. ;
Facchetti, A. ;
Sirringhaus, H. .
APPLIED PHYSICS LETTERS, 2010, 96 (18)
[5]   Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes [J].
Cheng, Xiaoyang ;
Caironi, Mario ;
Noh, Yong-Young ;
Newman, Christopher ;
Wang, Jianpu ;
Lee, Mi Jung ;
Banger, Kal ;
Di Pietro, Riccardo ;
Facchetti, Antonio ;
Sirringhaus, Henning .
ORGANIC ELECTRONICS, 2012, 13 (02) :320-328
[6]   Controlling Electron and Hole Charge Injection in Ambipolar Organic Field-Effect Transistors by Self-Assembled Monolayers [J].
Cheng, Xiaoyang ;
Noh, Yong-Young ;
Wang, Jianpu ;
Tello, Marta ;
Frisch, Johannes ;
Blum, Ralf-Peter ;
Vollmer, Antje ;
Rabe, Juergen P. ;
Koch, Norbert ;
Sirringhaus, Henning .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (15) :2407-2415
[7]   Charge transport in organic semiconductors [J].
Coropceanu, Veaceslav ;
Cornil, Jerome ;
da Silva Filho, Demetrio A. ;
Olivier, Yoann ;
Silbey, Robert ;
Bredas, Jean-Luc .
CHEMICAL REVIEWS, 2007, 107 (04) :926-952
[8]   Monte Carlo simulations of charge carrier mobility in semiconducting polymer field-effect transistors [J].
Demeyu, Lemi ;
Stafstroem, Sven ;
Bekele, Mulugeta .
PHYSICAL REVIEW B, 2007, 76 (15)
[10]   Transition from trap-controlled to trap-to-trap hopping transport in disordered organic semiconductors [J].
Fishchuk, II ;
Kadashchuk, AK ;
Vakhnin, A ;
Korosko, Y ;
Bässler, H ;
Souharce, B ;
Scherf, U .
PHYSICAL REVIEW B, 2006, 73 (11)