Analytical current-voltage model for polycrystalline-silicon thin-film transistors

被引：7

作者：

Kimura, M ^{[1
]}

Takizawa, T ^{[1
]}

Inoue, S ^{[1
]}

Shimoda, T ^{[1
]}

机构：

[1] Seiko Epson Corp, Technol Platform Res Ctr, Nagano 3990293, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 13期

关键词：

Active Layer - Conventional methods - Current-voltage models - Density equations - Insulator substrates - Polycrystalline silicon thin-film transistor - Surface state density;

D O I：

10.1063/1.1465108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analytical current-voltage model has been developed for polycrystalline-silicon thin-film transistors. This model is based on the Poisson equation and the carrier density equation on the condition that the active layer is intrinsic and fabricated on the insulator substrate. The surface state density was determined, and it was found that the conventional method underestimates this density. (C) 2002 American Institute of Physics.

引用

页码：2326 / 2328

页数：3

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