A 60 GHz Power Amplifier with 10 GHz 1-dB Bandwidth and 13.6% PAE in 65 nm CMOS

被引：0
作者：
Wang, Tong [1 ]
Mitomo, Toshiya [1 ]
Ono, Naoko [1 ,2 ]
Saigusa, Shigehito [1 ]
Watanabe, Osamu [1 ]
机构：
[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan
[2] Toshiba Co Ltd, Semicond & Storage Co, Kawasaki, Kanagawa 2128582, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2013年 / E96C卷 / 06期
关键词：
broadband amplifiers; millimeter wave integrated circuits; power amplifiers;
D O I：
10.1587/transele.E96.C.796
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A four-stage power amplifier (PA) with 10 GHz 1-dB bandwidth (56-66 GHz) is presented. The broadband performance is achieved owing to pi-section interstage matching network. Three-stage-current-reuse topology is proposed to enhance efficiency. The amplifier has been fabricated in 65 nm digital CMOS. 18 dB power gain and 9.6 dBm saturated power (Psat) are achieved at 60 GHz. The PA consumes current of 50 mA at 1.2 V supply voltage, and has a peak power-added efficiency (PAE) of 13.6%. To the best of the authors' knowledge, this work shows the highest PAE among the reported CMOS PAs that covers the worldwide 9 GHz ISM millimeter-wave band with less-than-1.2V supply voltage.
引用
收藏
页码：796 / 803
页数：8
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