Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 mu m GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (V-cri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff-state for HEMTs with thin GaN and composite buffers were similar to 100 V, however, this degraded to 50-60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest V-iso achieved based on thin GaN or composite buffer designs (600-700 V), while a much smaller V-iso of similar to 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4773060]