Growth of ultrathin films of substituted sexithiophene by organic molecular beam deposition

被引：1
作者：
Sassella, A
Borghesi, A
Destri, S
Porzio, W
Tubino, R
机构：
[1] Univ Milan, INFM, I-20126 Milan, Italy
[2] Univ Milan, Dipartimento Sci Mat, I-20126 Milan, Italy
[3] CNR, Ist Chim Macromol, I-20133 Milan, Italy
来源：
SYNTHETIC METALS | 1999年 / 101卷 / 1-3期
关键词：
epitaxy; UV-Vis absorption; X-ray diffraction; polycrystalline thin films; organic semiconductors based on conjugated molecules;
D O I：
10.1016/S0379-6779(98)00543-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Deposition of thin films of pi-substituted sexithiophene has been carried out by using organic molecular beam deposition. From the analysis of samples deposited on different inorganic and organic substrates some interesting information on the possibility of controlling the molecular orientation and the type of supermolecular organization is obtained. The comparison is performed among amorphous silica, indium tin oxide, graphite, poly-tetrafluoroethylene, and potassium phtalate as substrates. Highly oriented, optically anisotropic, films are obtained on organic single crystals properly cleaved, which strongly interact with the sexithiophene molecules.
引用
收藏
页码：530 / 531
页数：2
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