Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x ≈ 10%) saturable absorber quantum wells

被引：1

作者：

Ben Bouzid, S. ^{[1
]}

Zaghdoudi, W. ^{[1
]}

Hamdouni, A. ^{[1
]}

Ben Sedrine, N. ^{[1
]}

Bousbih, F. ^{[1
]}

Harmand, J. C. ^{[2
]}

Chtourou, R. ^{[1
]}

机构：

[1] Ctr Rech & Technol Energie, Lab Photovolta & Semicond, Hammam Lif 2050, Tunisia

[2] CNRS, Route Nozay, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 22期

关键词：

GaInNAsSb; GaAsN; molecular beam epitaxy; semiconductor saturable absorber;

D O I：

10.1016/j.apsusc.2008.05.225

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study the effect of the GaAsN narrow QWs on the optical properties of the GaInNAsSb/GaAs QWs using photoluminescence spectroscopy. A drastic effect of the N-rich layers on the QW photoluminesecnec (PL) intensity was observed with a strong influence of the spacer thickness. In the PL spectra a broad band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. Based on calculations from experimental data, we have identified the low QW peak energy to the E-1-H-1 transition using the shear deformation potentials report Delta p/p = 0.24. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：7122 / 7126

页数：5

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