Diffraction contrast STEM of dislocations: Imaging and simulations

被引：137

作者：

Phillips, P. J. ^{[2
]}

Brandes, M. C. ^{[2
]}

Mills, M. J. ^{[2
]}

De Graef, M. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

ULTRAMICROSCOPY | 2011年 / 111卷 / 9-10期

基金：

美国国家科学基金会;

关键词：

STEM; Defect imaging; Image simulation; Diffraction contrast; ELECTRON-MICROSCOPE;

D O I：

10.1016/j.ultramic.2011.07.001

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The application of scanning transmission electron microscopy (STEM) to crystalline defect analysis has been extended to dislocations. The present contribution highlights the use of STEM on two oppositely signed sets of near-screw dislocations in hcp alpha-Ti with 6 wt% Al in solid solution. In addition to common systematic row diffraction conditions, other configurations such as zone axis and 3g imaging are explored, and appear to be very useful not only for defect analysis, but for general defect observation. It is demonstrated that conventional TEM rules for diffraction contrast such as g . b and g . R are applicable in STEM. Experimental and computational micrographs of dislocations imaged in the aforementioned modes are presented. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1483 / 1487

页数：5

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