Role of surface substances in excitation of porous silicon photoluminescence

被引:0
|
作者
Khomenkova, LY [1 ]
Baran, NP [1 ]
Dzhumaev, BR [1 ]
Korsunskaya, NE [1 ]
Torchinskaya, TV [1 ]
Goldstein, Y [1 ]
Savir, E [1 ]
Many, A [1 ]
机构
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev, Ukraine
来源
EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 1999年 / 3725卷
关键词
porous silicon; photoluminescence; photoluminescence excitation; absorption center; emission center;
D O I
10.1117/12.344717
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.
引用
收藏
页码:111 / 115
页数:5
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