Linear array of InAs APDs operating at 2 μm

被引：18

作者：

Sandall, Ian C. ^{[1
]}

Zhang, Shiyong ^{[1
]}

Tan, Chee Hing ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 22期

基金：

英国工程与自然科学研究理事会;

关键词：

ELECTRON AVALANCHE PHOTODIODES; LOW-NOISE;

D O I：

10.1364/OE.21.025780

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A linear array of avalanche photodiodes (APDs) comprising of 128 pixels was fabricated from InAs. The uniformity of the dark currents and avalanche gain was investigated at 77, 200 K and room temperature. The array shows highly uniform results apart from some defective pixels at the edge of the arrays. At 200 K and at a wavelength of 2.04 mu m, we obtained an unmultiplied responsivity of 0.61 A/W at 0 V, along with a gain of 8.5 at a bias of 10 V. (c) 2013 Optical Society of America

引用

页码：25780 / 25787

页数：8

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