Defect observation in SiC wafers by room-temperature photoluminescence mapping

被引：7
作者：
Higashi, E.
Tajima, M.
Hoshino, N.
Hayashi, T.
Kinoshita, H.
Shiomi, H.
Matsumoto, S.
机构：
[1] Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan
[2] Keio Univ, Kouhoku Ku, Yokohama, Kanagawa 2230061, Japan
[3] SiXON Ltd, Ukyo Ku, Kyoto 6158686, Japan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 1-3期
关键词：
photoluminescence; mapping; SiC; defect;
D O I：
10.1016/j.mssp.2006.01.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We characterized SiC wafers by photoluminescence (PL) spectroscopy and mapping. Characteristic PL mapping patterns corresponded to etch-pit patterns originating from dislocations and micropipes. The intensities of the 1.3 eV band related to Si vacancies, the 0.9 eV band related to vanadium and the 1.1 eV band related to undefined UD-1 centers were decreased, increased and increased around dislocations, respectively. We believe that the variation of intensity contrast around dislocations can be ascribed to difference in the diffusivity between point defects and impurities, and in their interaction with dislocations. (c) 2006 Elsevier Ltd. All rights reserved.
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页码：53 / 57
页数：5
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