Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures

被引：0
作者：
Ardaravicius, L
Liberis, J
Matulionis, A
Mel'tser, BY
Solov'ev, VA
Shubina, TV
Ivanov, SV
Kop'ev, PS
机构：
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001 | 2002年 / 384-3卷
关键词：
hot electrons; microwave noise; energy relaxation; 2DEG; InAs/AISb/GaSb;
D O I：
10.4028/www.scientific.net/MSF.384-385.117
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Experimental technique based on microwave noise measurements is used to evaluate energy dissipation by hot electrons in a type II heterostructure consisting of InAs and GaSb with a thin AlSb barrier layer between them and containing a two-dimensional electron gas (2DEG). The energy relaxation time is estimated at 80 K and 300 K lattice temperatures. The energy relaxation time is almost independent of electric field and lattice temperature.
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收藏
页码：117 / 120
页数：4
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