The analysis of the current-voltage characteristics of the high barrier Au/Anthracene/n-Si MIS devices at low temperatures

被引：13
作者：
Kacus, H. [1 ]
Deniz, A. R. [1 ]
Caldiran, Z. [1 ]
Aydogan, S. [1 ]
Yesildag, A. [2 ]
Ekinci, D. [2 ]
机构：
[1] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey
[2] Ataturk Univ, Fac Sci, Dept Chem, TR-25240 Erzurum, Turkey
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2014年 / 143卷 / 02期
关键词：
Electronic materials; Interfaces; Organic compounds; Heterostructures; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; I-V-T; DIAZONIUM SALTS; ELECTROCHEMICAL REDUCTION; SCHOTTKY CONTACTS; COVALENT MODIFICATION; ORGANIC MONOLAYERS; CARBON SURFACES; SI/AL STRUCTURE;
D O I：
10.1016/j.matchemphys.2013.09.030
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Au/Anthracene/n-Si/Al MIS device was fabricated on the basis of anthracene film covalently bonded to a Si substrate. The MIS device showed Schottky behavior with barrier heights of 0.85 eV and ideality factors of 1.88 at 300 K. The barrier height of the Au/n-Si has increased after deposition of the anthracene layer onto Si. Temperature dependent current voltage (I V) measurements were performed on the Au/Anthracene/n-Si/A1 MIS diodes in the range 140-300 K. From the temperature dependence of forward bias the barrier height was observed to increase with temperature. However, the ideality factor decreased with increasing temperature. The values of activation energy (Ea) and Richardson constant (A*) were determined as 0.24 eV and 7.57 x 10(-6) A cm(-2) K-2 from the slope and the intercept at ordinate of the linear region of Richardson plot, respectively. The increase of the series resistance R, with the fall of temperature was attributed to lack of free carrier concentration at low temperatures. (C) 2013 Elsevier B.V. All rights reserved.
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收藏
页码：545 / 551
页数：7
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