Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

被引：35

作者：

Fiorenza, JG ^{[1
]}

del Alamo, JA ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 04期

关键词：

power MOSFET; silicon-on-insulator (SOI) technology;

D O I：

10.1109/16.992880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have simultaneously fabricated PX power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage (I-V), capacitance-voltage (C-V), S-parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses.

引用

页码：687 / 692

页数：6

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