Quantitative electric field mapping of a p-n junction by DPC STEM

被引:15
|
作者
Toyama, Satoko [1 ]
Seki, Takehito [1 ]
Anada, Satoshi [3 ]
Sasaki, Hirokazu [2 ]
Yamamoto, Kazuo [3 ]
Ikuhara, Yuichi [1 ,3 ]
Shibata, Naoya [1 ,3 ]
机构
[1] Univ Tokyo, Sch Engn, Inst Engn Innovat, Tokyo 1138656, Japan
[2] Furukawa Elect Corp Ltd, Adv Technol R&D Labs, Yokohama, Kanagawa 2200073, Japan
[3] Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan
关键词
HOLOGRAPHY; CONTRAST; DETECTOR; MICROSCOPY;
D O I
10.1016/j.ultramic.2020.113033
中图分类号
TH742 [显微镜];
学科分类号
摘要
Local electromagnetic fields in a specimen is measured at high spatial resolutions using differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). According to previous studies, DPC signals can be quantified by measuring the center of mass of the diffraction pattern intensity and/or performing a deconvolution method based on a phase contrast transfer function (PCTF). However, when using a segmented detector, the field strength has been considerably underestimated for a very thick specimen. The main cause of the underestimation is assumed to be inelastic scattering, mainly bulk plasmon scattering. In this study, we develop a method to remove this inelastic scattering effect from segmented detector DPC signals by modifying the PCTF deconvolution method. Field quantification results using this new technique are compared with those using pixelated detector DPC and electron holography, and all results indicated good agreement within an error margin.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] Silicon fiber with p-n junction
    Homa, D.
    Cito, A.
    Pickrell, G.
    Hill, C.
    Scott, B.
    APPLIED PHYSICS LETTERS, 2014, 105 (12)
  • [42] INVERSION OF (P-N)-JUNCTION REACTIVITY
    ABDULLAE.GB
    ISKENDER.ZA
    DZHAFARO.EA
    AKHUNDOV, MR
    ALIKHANO.SA
    DOKLADY AKADEMII NAUK SSSR, 1971, 200 (02): : 314 - +
  • [43] A PROPOSED P-N JUNCTION CATHODE
    GEPPERT, DV
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 61 - &
  • [44] P-N JUNCTION OF TANTALUM DIODE
    KOMORITA, K
    YAMAGUCH.K
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1965, 48 (08): : 105 - &
  • [45] A SILICON P-N JUNCTION TRANSDUCER
    LEGAT, WH
    RUSSELL, LK
    SOLID-STATE ELECTRONICS, 1965, 8 (09) : 709 - &
  • [46] THE PHOTOMAGNETIC EFFECT IN A P-N JUNCTION
    KIKOIN, IK
    NIKOLAEV, IN
    SOVIET PHYSICS JETP-USSR, 1962, 14 (05): : 1203 - 1205
  • [47] ON THE THEORY OF PHOTOCELLS WITH A P-N JUNCTION
    MOIZHES, BY
    SOVIET PHYSICS-SOLID STATE, 1960, 2 (02): : 202 - 207
  • [48] TRANSIENT RESPONSE OF A P-N JUNCTION
    LAX, B
    NEUSTADTER, SF
    JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154
  • [49] ZnO p-n Junction Photodetectors
    Li, Linghui
    Lubguban, Jorge
    Yu, Ping
    White, Henry W.
    Ryu, Yungryel
    Lee, Tae-Seok
    2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007, : 57 - +
  • [50] ON P-N JUNCTION SIMILARITY IN SEMICONDUCTORS
    CHEREPANOV, VS
    KULKIN, KM
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (12): : 2009 - +