Quantitative electric field mapping of a p-n junction by DPC STEM

被引:15
|
作者
Toyama, Satoko [1 ]
Seki, Takehito [1 ]
Anada, Satoshi [3 ]
Sasaki, Hirokazu [2 ]
Yamamoto, Kazuo [3 ]
Ikuhara, Yuichi [1 ,3 ]
Shibata, Naoya [1 ,3 ]
机构
[1] Univ Tokyo, Sch Engn, Inst Engn Innovat, Tokyo 1138656, Japan
[2] Furukawa Elect Corp Ltd, Adv Technol R&D Labs, Yokohama, Kanagawa 2200073, Japan
[3] Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan
关键词
HOLOGRAPHY; CONTRAST; DETECTOR; MICROSCOPY;
D O I
10.1016/j.ultramic.2020.113033
中图分类号
TH742 [显微镜];
学科分类号
摘要
Local electromagnetic fields in a specimen is measured at high spatial resolutions using differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). According to previous studies, DPC signals can be quantified by measuring the center of mass of the diffraction pattern intensity and/or performing a deconvolution method based on a phase contrast transfer function (PCTF). However, when using a segmented detector, the field strength has been considerably underestimated for a very thick specimen. The main cause of the underestimation is assumed to be inelastic scattering, mainly bulk plasmon scattering. In this study, we develop a method to remove this inelastic scattering effect from segmented detector DPC signals by modifying the PCTF deconvolution method. Field quantification results using this new technique are compared with those using pixelated detector DPC and electron holography, and all results indicated good agreement within an error margin.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Electric field distribution in the base of semiconductor p-n junction diode
    N. S. Aramyan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2007, 42 (1) : 34 - 37
  • [2] DETERMINATION OF ELECTRIC FIELD IN A P-N JUNCTION FROM CAPACITANCE MEASUREMENTS
    BERMAN, LS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (03): : 511 - &
  • [3] CHANGE IN WIDTH OF FORBIDDEN BAND OF SILICON IN ELECTRIC FIELD OF A P-N JUNCTION
    BRITSYN, KI
    SMIRNOV, AA
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 126 - +
  • [4] Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction
    Yang, Pan
    Chen, Wen-Jie
    Wang, Jiao
    Yan, Zhao-Wen
    Qiao, Jian-Li
    Xiao, Tong
    Wang, Xin
    Pang, Zheng-Peng
    Yang, Jian-Hong
    CHINESE PHYSICS B, 2016, 25 (04)
  • [5] Quantitative electric field mapping in semiconductor heterostructures via tilt-scan averaged DPC STEM
    Toyama, Satoko
    Seki, Takehito
    Kanitani, Yuya
    Kudo, Yoshihiro
    Tomiya, Shigetaka
    Ikuhara, Yuichi
    Shibata, Naoya
    ULTRAMICROSCOPY, 2022, 238
  • [6] POTENTIAL AND ELECTRIC-FIELD AT METALLURGICAL BOUNDARY OF AN ABRUPT P-N SEMICONDUCTOR JUNCTION
    KENNEDY, DP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 988 - 994
  • [7] DRIFT TIME OF CARRIERS IN FIELD OF A P-N JUNCTION
    TARKHIN, DV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1098 - &
  • [8] Changing the Voltage of the p-n Junction in a Magnetic Field
    Gulyamov, Gafur
    Mukhitdinova, Feruza
    Majidova, Gulnoza
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2023, 21 (04) : 273 - 277
  • [9] Eddy currents in the p-n junction in a microwave field
    Shamirzaev, S. H.
    Gulyamov, G.
    Dadamirzaev, M. G.
    Gulyamov, A. G.
    SEMICONDUCTORS, 2009, 43 (09) : 1170 - 1173
  • [10] Direct imaging of a biased p-n junction with conductance mapping
    Park, JY
    Williams, ED
    Phaneuf, RJ
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) : 3745 - 3749