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- [2] DETERMINATION OF ELECTRIC FIELD IN A P-N JUNCTION FROM CAPACITANCE MEASUREMENTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (03): : 511 - &
- [3] CHANGE IN WIDTH OF FORBIDDEN BAND OF SILICON IN ELECTRIC FIELD OF A P-N JUNCTION SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 126 - +
- [7] DRIFT TIME OF CARRIERS IN FIELD OF A P-N JUNCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1098 - &