Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

被引:186
作者
Dai, Xing [1 ]
Messanvi, Agnes [1 ,2 ,3 ]
Zhang, Hezhi [1 ]
Durand, Christophe [2 ,3 ]
Eymery, Joel [2 ,3 ]
Bougerol, Catherine [2 ,4 ]
Julien, Francois H. [1 ]
Tchernycheva, Maria [1 ]
机构
[1] Univ Paris 11, UMR CNRS 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Univ Grenoble Alpes, F-38000 Grenoble, France
[3] CEA, INAC SP2M, Nanophys & Semicond Grp, F-38000 Grenoble, France
[4] CNRS, Inst Neel, Nanophys & Semicond Grp, F-38000 Grenoble, France
基金
欧洲研究理事会;
关键词
Nanowires; nitrides; light emitting diodes; color-tunable emitters; flexible devices; organic/inorganic hybrid devices; HIGH-PERFORMANCE; SMALL-MOLECULE; TRANSPARENT; DEGRADATION; FILMS; ELECTRODES; EFFICIENCY; PROGRESS; LEDS;
D O I
10.1021/acs.nanolett.5b02900
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nano-wires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift-off and contacting using silver nanowire transparent electrodes. The LEDs exhibit rectifying behavior with a light-up voltage around 3 V. The devices show no electro-luminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation. Fully transparent flexible LEDs with high optical transmittance are also fabricated. Finally, a two-color flexible LED emitting in the green and blue spectral ranges is demonstrated combining two layers of InGaN/GaN nanowires with different In contents.
引用
收藏
页码:6958 / 6964
页数:7
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