Electrical properties of microcrystalline Sc3N@C80 fullerene

被引：3

作者：

Takase, Tsuyoshi ^{[1
]}

Sakaino, Masamichi ^{[1
]}

Kirimoto, Kenta ^{[2
]}

Sun, Yong ^{[1
]}

机构：

[1] Kyushu Inst Technol, Dept Appl Sci Integrated Syst Engn, Kitakyushu, Fukuoka 8048550, Japan

[2] Kitakyushu Natl Coll Technol, Dept Elect & Elect Engn, Kitakyushu, Fukuoka 8020985, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 112卷 / 04期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

C-60; STABILITY;

D O I：

10.1007/s00339-012-7449-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of microcrystalline Sc3N@C-80 fullerene with fcc structure are studied by measuring both d.c. conductivity temperature dependence and a.c. impedance. Below 450 K the Sc3N@C-80 sample has an energy band gap of 1.71 eV, which does not depend on the strength of the applied electric field. But when the temperature is above 450 K, a phase transition which results in a small band gap of 1.22 eV occurs under electric field strengths larger than 1 kV/cm. We also found from Cole-Cole plots of a.c. impedance that the contact resistance at the Au/Sc3N@C-80 interface is less than that at the Au/C-60 interface.

引用

页码：927 / 931

页数：5

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