Excitonic structure of GaN epitaxial films grown by hydride-vapor-phase epitaxy

被引：0
|
作者：
Eckey, L
Podlowski, L
Goldner, A
Hoffmann, A
Broser, I
Meyer, BK
Volm, D
Streibl, T
Hiramatsu, K
Detchprohm, T
Amano, H
Akasaki, I
机构：
[1] TECH UNIV MUNICH,PHYS DEPT E16,D-85747 GARCHING,GERMANY
[2] NAGOYA UNIV,SCH ENGN,DEPT ELECTR,NAGOYA,AICHI 46801,JAPAN
[3] MEIJO UNIV,DEPT ELECT & ELECTR ENGN,NAGOYA,AICHI 468,JAPAN
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on highly resolved exciton spectra of GaN films grown by hydride vapor phase epitaxy. Using calorimetric absorption and calorimetric reflection spectroscopy the excitonic transitions originating from the A-, B-, and C-valence bands are precisely determined and the crystal-field and spin-orbit-splitting energies are calculated. We also present the first magneto-optical experiments on the neutral-donor-bound exciton. Electron as well as the hole g-values are obtained by analyzing the Zeeman splittings at 12 T.
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页码：943 / 946
页数：4
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