Elastic theory for strained heterostructures with in-plane anisotropy

An analytical formulation of elastic strain in epitaxially grown crystalline film was derived. The concept of anisotropic in-plane strain was included in the method, which is applicable to the investigation of strained films with an anisotropic defect configuration or fabrication-induced anisotropic stress. The developed method applies to arbitrary crystal classes with arbitrary surface orientations. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2977673]