Formation of SiC nanowhiskers by carbothermic reduction of silica with activated carbon

被引：53

作者：

Dhage, Sanjay ^{[1
,2
]}

Lee, Hyun-Choel ^{[1
,2
]}

Hassan, M. Shamshi ^{[1
,2
]}

Akhtar, M. Shaheer ^{[1
,2
]}

Kim, Chong-Yeal ^{[3
,4
]}

Sohn, Jung Min ^{[5
]}

Kim, Ki-Ju ^{[1
,2
]}

Shin, Hyung-Shik ^{[1
,2
]}

Yang, O-Bong ^{[1
,2
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, Jeonbuk, South Korea

[2] Chonbuk Natl Univ, Solar Energy Res Ctr, Jeonju 561756, Jeonbuk, South Korea

[3] Chonbuk Natl Univ, Dept Sci Studies, Jeonju 561756, Jeonbuk, South Korea

[4] Chonbuk Natl Univ, New & Renewable Energy Ctr, Jeonju 561756, Jeonbuk, South Korea

[5] Chonbuk Natl Univ, Dept Min Resource & Energy Engn, Jeonju 561756, Jeonbuk, South Korea

来源：

MATERIALS LETTERS | 2009年 / 63卷 / 02期

关键词：

SiC; Nanowhiskers; Carbothermic reduction; SiO2; Activated carbon; CHEMICAL-VAPOR-DEPOSITION; CARBIDE; NANORODS; NANOWIRES; CATALYST; NANOSTRUCTURES; MORPHOLOGY; WHISKERS; GROWTH;

D O I：

10.1016/j.matlet.2008.09.056

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The silicon carbide (SiC) nanowhiskers were obtained by a carbothermic reduction of silica (SiO2) with activated carbon at 1450 degrees C. The products were characterized by X-ray diffraction (XRD), Fourier transformed infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HR-TEM). The Sic nanowhiskers were grown as crystalline beta-SiC with the diameter ranging from 20 to 150 nm grew along (111) direction with the length up to several tens of micrometers. Yield of beta-SiC is very high with the moderate amount of un-reacted SiO2. This is the first report on the synthesis of high yield of beta-SiC by simple direct heating method. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：174 / 176

页数：3

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