Variation of Mott Parameters by Chemical Modification of (In50Se50)90M10 (M= Ag and Bi) Thin Films

被引：0

作者：

Gupta, Shikha ^{[1
]}

Mustafa, Falah I. ^{[1
]}

Goyal, N. ^{[1
]}

Tripathi, S. K. ^{[1
]}

机构：

[1] Panjab Univ, Ctr Adv Study Phys, Dept Phys, Chandigarh 160014, India

来源：

SOLID STATE PHYSICS, VOL 57 | 2013年 / 1512卷

关键词：

Electrical; conductivity; Variable range hopping; CHALCOGENIDE GLASSES;

D O I：

10.1063/1.4791150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of chemical composition InSe and (In50Se50)(90)M-10 (M= Ag and Bi) are prepared by thermal evaporation technique. X-ray analysis confirms the amorphous nature of the obtained thin films. DC electrical conductivity was studied for InSe and (In50Se50)(90)M-10 (M= Ag and Bi) thin films as a function of temperature in the temperature range 100-370 K. The obtained results showed that the conduction activation energy has three values indicating the presence of three conduction mechanisms through the investigated range of temperature which can be explained in accordance with Mott and Davis model.

引用

页码：540 / 541

页数：2

共 4 条

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