Synthesis and nucleic-acid-binding properties of sulfamide- and 3′-N-sulfamate-modified DNA

被引:26
作者
Fettes, KJ
Howard, N
Hickman, DT
Adah, S
Player, MR
Torrence, PF
Micklefield, J
机构
[1] Univ Manchester, Inst Sci & Technol, Dept Chem, Manchester M60 1QD, Lancs, England
[2] Univ London Birkbeck Coll, Dept Chem, London WC1H 0PP, England
[3] NIDDK, Med Chem Lab, NIH, Bethesda, MD 20892 USA
[4] No Arizona Univ, Dept Chem, Flagstaff, AZ 86011 USA
来源
JOURNAL OF THE CHEMICAL SOCIETY-PERKIN TRANSACTIONS 1 | 2002年 / 04期
关键词
D O I
10.1039/b110603c
中图分类号
O62 [有机化学];
学科分类号
070303 ; 081704 ;
摘要
A novel synthetic route for the preparation of sulfamide- and 3'-N-sulfamate-modified dinucleosides has been developed. The synthesis utilises 4-nitrophenyl chlorosulfate to prepare 4-nitrophenyl 3'- or 5'-sulfamates (e.g., 18 and 27), which couple smoothly with the alcohol or amine functionalities of other nucleosides. The conformational properties of the sulfamide- and 3'-N-sulfamate-modified dinucleosides d(TnsnT) and d(TnsoT) were compared with the native dinucleotide d(TpT) using NMR and CD spectroscopy. Whilst both modi cations result in a shift in the conformational equilibrium of the 5'-terminal ribose rings from C2'-endo to a preferred C3'-endo conformation, only the 3'-N-sulfamate-modified dimer exhibits an increased propensity to adopt a base-stacked helical conformation. Incorporation of the sulfamide- and 3'-N-sulfamate modi cations into the DNA sequence d(GCGT(10)GCG) allowed the duplex melting temperature to be determined using UV thermal denaturation experiments. This reveals that the sulfamide modi cation significantly destabilises duplexes with both complementary DNA and RNA. However, the 3'-N-sulfamate modi cation has little effect on duplex stability and even stabilises DNA duplexes at low salt concentration. These results indicate that the 3'-N-sulfamate group is one of the most promising neutral replacements of the phosphodiester group in nucleic acids, that have been developed to date, for therapeutic and other important applications.
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页码:485 / 495
页数:11
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