Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

被引：35

作者：

Zhang, Cher Xuan ^{[1
]}

Zhang, En Xia ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Dhar, Sarit ^{[2
]}

Ryu, Sei-Hyung ^{[2
]}

Shen, Xiao ^{[3
]}

Pantelides, Sokrates T. ^{[3
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Cree Inc, Durham, NC 27703 USA

[3] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 01期

基金：

美国国家科学基金会;

关键词：

Interface traps; low-frequency noise; silicon carbide; temperature dependence; 1/F NOISE; MOS; MOBILITY; MODEL;

D O I：

10.1109/LED.2012.2228161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface.

引用

页码：117 / 119

页数：3

共 50 条

[31] Channel Transport in 4H-SiC MOSFETs: A Brief Review
Dhar, Sarit
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3, 2013, 58 (04): : 51 - 60
[32] Passivation of the oxide/4H-SiC interface
Jamet, P
Dimitrijev, S
Tanner, P
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 973 - 976
[33] A nanoscale look in the channel of 4H-SiC lateral MOSFETs
Fiorenza, Patrick
Frazzetto, Alessia
Swansoni, Lukas K.
Giannazzo, Filippo
Roccaforte, Fabrizio
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 699 - +
[34] Investigation of drain current saturation in 4H-SiC MOSFETs
Pennington, G.
Potbhare, S.
Goldsman, N.
Habersat, D.
Lelis, A.
McGarrity, J.
Ashman, C.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 811 - +
[35] A physical model of high temperature 4H-SiC MOSFETs
Potbhare, Siddharth
Goldsman, Neil
Lelis, Aivars
McGarrity, James M.
McLean, F. Barry
Habersat, Daniel
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 2029 - 2040
[36] Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs
Bencherif, H.
Dehimi, L.
Pezzimenti, F.
Della Corte, F. G.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, 125 (05):
[37] Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs
Roccaforte, Fabrizio
Fiorenza, Patrick
Giannazzo, Filippo
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (08) : N3006 - N3011
[38] Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs
Doi, Takuma
Shibayama, Shigehisa
Sakashital, Mitsuo
Taokal, Noriyuki
Shimizu, Mitsuaki
Nakatsuka, Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (02)
[39] Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions
Rumyantsev, S. L.
Levinshtein, M. E.
Shur, M. S.
Palmour, J. W.
Agarwal, A. K.
Das, M. K.
2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 100 - +
[40] Reliability evaluation of 4H-SiC JFETs using I-V characteristics and Low Frequency Noise
Chan, H. K.
Stevens, R. C.
Goss, J. P.
Wright, N. G.
Horsfall, A. B.
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 934 - +

← 1 2 3 4 5 →