Photopumped stimulated emission from homoepitaxial GaN grown on bulk GaN prepared by sublimation method

被引：44

作者：

Kurai, S ^{[1
]}

Naoi, Y ^{[1
]}

Abe, T ^{[1
]}

Ohmi, S ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] SHARP CO LTD,CENT RES LABS,TENRI,NARA 632,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 1B期

关键词：

GaN; bulk GaN; sublimation growth; homoepitaxy; MOCVD growth; photopumping; stimulated emission; laser;

D O I：

10.1143/JJAP.35.L77

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed stimulated emission at room temperature from a photopumped homoepitaxial GaN for the first time. A homoepitaxial layer was grown by atmospheric metalorganic chemical vapor deposition (MOCVD) on small hexagonal bulk GaN prepared by the sublimation method. The lasing threshold of the pumping power density is 0.8G MW/cm(2) and the stimulated emission is polarized with its electric vector perpendicular to the c-axis.

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页码：L77 / L79

页数：3

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