Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid

被引：31

作者：

Segawa, Kouji ^{[1
]}

Ren, Zhi ^{[1
]}

Sasaki, Satoshi ^{[1
]}

Tsuda, Tetsuya ^{[2
,3
]}

Kuwabata, Susumu ^{[3
,4
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[2] Osaka Univ, Grad Sch Engn, Frontier Res Base Global Young Researchers, Suita, Osaka 5650871, Japan

[3] Osaka Univ, Grad Sch Engn, Dept Appl Chem, Suita, Osaka 5650871, Japan

[4] Japan Sci & Technol Agcy JST, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 07期

关键词：

DIRAC CONE; SUPERCONDUCTIVITY; TRANSITION; DENSITY; SURFACE; STATE;

D O I：

10.1103/PhysRevB.86.075306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating BiSbTeSe2 system where the chemical potential is located close to both the surface Dirac point and the middle of the bulk band gap. Thanks to the use of ionic liquid, the control of the surface chemical potential by gating was possible on the whole surface of a bulk three-dimensional sample, opening new experimental opportunities for topological insulators. In addition, our data suggest the existence of a nearly reversible electrochemical reaction that causes bulk carrier doping into the crystal during the ionic-liquid gating process.

引用

页数：7

共 43 条

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