Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate

被引：14

作者：

Hasan, Musarrat ^{[1
]}

Dong, Rui ^{[1
]}

Choi, H. J. ^{[1
]}

Lee, D. S. ^{[1
]}

Seong, D. -J. ^{[1
]}

Pyun, M. B. ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2969052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied resistance switching characteristics of ruthenium oxide (RuO(x))/niobium-doped strontium titanate (Nb:STO) contact. With increasing oxygen content of oxide electrode, the resistance window was improved. The switching speed of RuO(x) electrode also showed improvement compared to platinum (Pt) electrode. The RuO(x) film contains amorphous phase and also forms an interface oxide layer at the RuO(x)/Nb:STO contact, which suggests defect generation near the interface. Additionally, the interface reaction disturbs the crystalline orientation of Nb:STO. These defect sites facilitate switching properties by easy drift of current and oxygen ion and also by modulation of barrier height.

引用

页数：3

共 24 条

[1]

[Anonymous], 2007, INT TECHNOLOGY ROADM

[2] Electrochemical investigations of SrTiO3 boundaries [J].

Denk, I ;

Claus, J ;

Maier, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (10) :3526-3536

[3] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS [J].

FREEOUF, JL ;

JACKSON, TN ;

LAUX, SE ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :634-636

[4] Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions [J].

Fujii, T. ;

Kawasaki, M. ;

Sawa, A. ;

Kawazoe, Y. ;

Akoh, H. ;

Tokura, Y. .

PHYSICAL REVIEW B, 2007, 75 (16)

[5] Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 [J].

Fujii, T ;

Kawasaki, M ;

Sawa, A ;

Akoh, H ;

Kawazoe, Y ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :012107-1

[6] Schottky barrier formed by network of screw dislocations in SrTiO3 -: art. no. 162105 [J].

Guo, X ;

Zhang, ZL ;

Sigle, W ;

Wachsman, E ;

Waser, R .

APPLIED PHYSICS LETTERS, 2005, 87 (16) :1-3

[7] Improved thermal stability of ruthenium oxide metal gate electrode on hafnium oxide gate dielectric [J].

Hasan, Musarrat ;

Park, Hokyung ;

Lee, Joon-myong ;

Hwang, Hyunsang .

APPLIED PHYSICS LETTERS, 2007, 91 (03)

[8]

IGNATIEV A, 2006, INT EL DEV M, P100

[9] Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory [J].

Janousch, Markus ;

Meijer, G. Ingmar ;

Staub, Urs ;

Delley, Bernard ;

Karg, Siegfried F. ;

Andreasson, Bjorn P. .

ADVANCED MATERIALS, 2007, 19 (17) :2232-+

[10] Thermally grown ruthenium oxide thin films [J].

Jelenkovic, EV ;

Tong, KY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05) :2319-2325

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