A large-area terahertz emitter based on an interdigital finger electrode photoconductive switch on low-temperature grown GaAs attached to a hexagonal microlens array is demonstrated. The hexagonal arranged microlenses direct the incident IR excitation pulses into specified electrode gaps, resulting in constructive interference in the terahertz far field. Using a Ti:sapphire oscillator running at 80 MHz with 150 fs pulses, 6.5 mu m THz average power at 540 mW optical excitation is obtained. The maximum IR-to-terahertz conversion efficiency achieved is >= 1.35x10(-5). (c) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 11 条
[11]
Singh J., 2003, Electronic and Optoelectronic Properties of Semiconductor Structure, DOI 10.1016/B978-044451734-0.50022-3