Performance improvement of low-temperature a-SiGe:H thin-film transistors

被引：11

作者：

Dominguez, Miguel ^{[1
]}

Rosales, Pedro ^{[1
]}

Torres, Alfonso ^{[1
]}

机构：

[1] INAOE, Dept Elect, Puebla 72840, Mexico

来源：

SOLID-STATE ELECTRONICS | 2012年 / 76卷

关键词：

Thin-film transistor; Hydrogenated amorphous silicon-germanium; Hydrogen plasma; Low-temperature; AMORPHOUS-SILICON; MICROCRYSTALLINE SILICON; DAMAGE;

D O I：

10.1016/j.sse.2012.06.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the study of an interface preparation procedure in the source/drain regions of the active layer, prior to deposit the n+ a-Ge:H contact layer in the fabrication process of low-temperature a-SiGe:H thin-film transistors. The devices were fabricated on corning 1737 substrates at 200 degrees C. The improvement in metal-semiconductor interface by the interface preparation procedure was demonstrated. This interface improvement translates in higher mobility and better values of off-current, on/off-current ratio, subthreshold slope and threshold voltage. (C) 2012 Elsevier Ltd. All rights reserved.

引用

收藏

页码：44 / 47

页数：4

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