Structural properties of BaTiO3/ZnO heterostructures and interfaces

被引：0
作者：
Kranert, C. [1 ]
Boentgen, T. [1 ]
Schmidt-Grund, R. [1 ]
Brandt, M. [1 ]
Schoeche, S. [2 ]
Sturm, C. [1 ]
Hochmuth, H. [1 ]
Lorenz, M. [1 ]
Grundmann, M. [1 ]
机构：
[1] Univ Leipzig, Inst Expt Phys 2, Fak Phys & Geowissensch, Linnestr 5, D-04103 Leipzig, Germany
[2] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
BaTiO3; ZnO; XRD; Raman-Spectroscopy; PULSED-LASER DEPOSITION; THIN-FILMS;
D O I：
10.1063/1.3666448
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the investigation of the structural properties of BaTiO3(BTO)/ZnO heterostructures grown by pulsed laser deposition (PLD). Special emphasis is devoted to the growth properties of BTO on ZnO and the BTO/ZnO interface. X-ray diffraction (XRD) measurements of thick BTO layers reveal well (100)-oriented BTO films. Sensitive UV-excited Raman measurements of very thin BTO films on (00.1) ZnO reveal the possible presence of a hexagonal BTO phase close to the interface, in addition to the dominating tetragonal BTO phase.
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页数：2
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