Memristor-Based Analog Computation and Neural Network Classification with a Dot Product Engine

被引:594
作者
Hu, Miao [1 ]
Graves, Catherine E. [1 ]
Li, Can [2 ]
Li, Yunning [2 ]
Ge, Ning [3 ]
Montgomery, Eric [1 ]
Davila, Noraica [1 ]
Jiang, Hao [2 ]
Williams, R. Stanley [1 ]
Yang, J. Joshua [2 ]
Xia, Qiangfei [2 ]
Strachan, John Paul [1 ]
机构
[1] Hewlett Packard Enterprise, Hewlett Packard Labs, Palo Alto, CA 94304 USA
[2] Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA
[3] HP Inc, HP Labs, Palo Alto, CA 94304 USA
关键词
crossbar arrays; memristor; metal oxide; neuromorphic computing; SYNAPSES; ARRAY;
D O I
10.1002/adma.201705914
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Using memristor crossbar arrays to accelerate computations is a promising approach to efficiently implement algorithms in deep neural networks. Early demonstrations, however, are limited to simulations or small-scale problems primarily due to materials and device challenges that limit the size of the memristor crossbar arrays that can be reliably programmed to stable and analog values, which is the focus of the current work. High-precision analog tuning and control of memristor cells across a 128 x 64 array is demonstrated, and the resulting vector matrix multiplication (VMM) computing precision is evaluated. Single-layer neural network inference is performed in these arrays, and the performance compared to a digital approach is assessed. Memristor computing system used here reaches a VMM accuracy equivalent of 6 bits, and an 89.9% recognition accuracy is achieved for the 10k MNIST handwritten digit test set. Forecasts show that with integrated (on chip) and scaled memristors, a computational efficiency greater than 100 trillion operations per second per Watt is possible.
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页数:10
相关论文
共 56 条
  • [1] Agarwal S, 2016, IEEE IJCNN, P929, DOI 10.1109/IJCNN.2016.7727298
  • [2] Energy Scaling Advantages of Resistive Memory Crossbar Based Computation and Its Application to Sparse Coding
    Agarwal, Sapan
    Quach, Tu-Thach
    Parekh, Ojas
    Hsia, Alexander H.
    DeBenedictis, Erik P.
    James, Conrad D.
    Marinella, Matthew J.
    Aimone, James B.
    [J]. FRONTIERS IN NEUROSCIENCE, 2016, 9
  • [3] Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
    Ambrogio, Stefano
    Balatti, Simone
    Milo, Valerio
    Carboni, Roberto
    Wang, Zhong-Qiang
    Calderoni, Alessandro
    Ramaswamy, Nirmal
    Ielmini, Daniele
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (04) : 1508 - 1515
  • [4] [Anonymous], 2011, 2011 INT EL DEV M WA
  • [5] [Anonymous], INT C LEARN REPR ICL
  • [6] [Anonymous], 2015, IEEE INT EL DEV M IE, DOI [10.1109/IEDM.2015.7409718, DOI 10.1109/IEDM.2015.7409718]
  • [7] CAN PROGRAMMING BE LIBERATED FROM VON NEUMANN STYLE - FUNCTIONAL STYLE AND ITS ALGEBRA OF PROGRAMS
    BACKUS, J
    [J]. COMMUNICATIONS OF THE ACM, 1978, 21 (08) : 613 - 641
  • [8] Large-scale neural networks implemented with non-volatile memory as the synaptic weight element: comparative performance analysis (accuracy, speed, and power)
    Burr, G. W.
    Narayanan, P.
    Shelby, R. M.
    Sidler, S.
    Boybat, I.
    di Nolfo, C.
    Leblebici, Y.
    [J]. 2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,
  • [9] Neuromorphic computing using non-volatile memory
    Burr, Geoffrey W.
    Shelby, Robert M.
    Sebastian, Abu
    Kim, Sangbum
    Kim, Seyoung
    Sidler, Severin
    Virwani, Kumar
    Ishii, Masatoshi
    Narayanan, Pritish
    Fumarola, Alessandro
    Sanches, Lucas L.
    Boybat, Irem
    Le Gallo, Manuel
    Moon, Kibong
    Woo, Jiyoo
    Hwang, Hyunsang
    Leblebici, Yusuf
    [J]. ADVANCES IN PHYSICS-X, 2017, 2 (01): : 89 - 124
  • [10] Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
    Burr, Geoffrey W.
    Shelby, Robert M.
    Sidler, Severin
    di Nolfo, Carmelo
    Jang, Junwoo
    Boybat, Irem
    Shenoy, Rohit S.
    Narayanan, Pritish
    Virwani, Kumar
    Giacometti, Emanuele U.
    Kuerdi, Bulent N.
    Hwang, Hyunsang
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) : 3498 - 3507