Carrier transport mechanism at metal/amorphous gallium indium zinc oxides interfaces

被引：12

作者：

Kim, Seongjun ^{[1
]}

Kim, Kyoung-Kook ^{[2
]}

Kim, Hyunsoo ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILM TRANSISTORS; GA-ZN-O; SEMICONDUCTORS; ELECTRODES; RESISTANCE;

D O I：

10.1063/1.4737423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the carrier transport mechanism of Ni/Au Ohmic contacts to amorphous gallium indium zinc oxides. Despite the expected large barrier height, Ohmic contact could be achieved due to the trap-assisted tunneling associated with localized tail states. Upon thermal annealing, the specific contact resistance was further reduced to 3.28 x 10(-4) Omega cm(2), accompanied by a change in the predominant transport mechanism from trap-limited conduction to degenerate conduction. The Ohmic mechanism could be explained in terms of the thermionic field emission model, yielding a tunneling parameter of 49 meV, a Schottky barrier height of 0.63 eV, and a barrier width of 5.2 nm. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737423]

引用

页数：4

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