Room temperature nanoimprint lithography using molds fabricated by molecular beam epitaxy

被引:24
作者
Harrer, Stefan [1 ]
Strobel, Sebastian [2 ]
Scarpa, Giuseppe [1 ]
Abstreiter, Gerhard [2 ]
Tornow, Marc [3 ]
Lugli, Paolo [1 ]
机构
[1] Tech Univ Munich, Inst Nanoelect, D-80333 Munich, Germany
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[3] Inst Halbleitertech, D-38106 Braunschweig, Germany
关键词
GaAs/AlGaAs; molecular beam epitaxy (MBE); nanofabrication; nanoimprint lithography; room temperature nanoimprint lithography (RTNIL);
D O I
10.1109/TNANO.2008.917782
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have demonstrated single-step room temperature nanoimprint lithography (RTNIL) using polystyrene (PS, average molecular weights ranging from 13 to 97 kg/mol) as the imprint polymer layer on a silicon substrate for imprinting rectangular line patterns with varying aspect ratios, ranging from 11 to 500 inn wide. To accomplish this demonstration, we designed and built a tool that controllably pressed a mold into a stationary imprint sanipleapplying imprint pressures between 280 and 700 MPa. The molds used in these experiments were GaAs/AlGaAs sandwich structures fabricated by molecular beam epitaxy (MBE) that we cleaved and selectively etched afterward in order to generate 3-D grating structures with nanometer resolution on their edges. We fabricated positive and negative molds comprising single-line as well as multiline patterns with different aspect ratios and linewidths between 9 and 300 nm.
引用
收藏
页码:363 / 370
页数:8
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